Ti-doped Sn2Se3 phase change material for improved thermal stability

被引：3

作者：

Zhu, Debin ^{[1
]}

Yu, Niannian ^{[1
]}

Gong, Chuantao ^{[2
]}

Zhou, Lingjun ^{[2
]}

Sun, Zhigang ^{[3
]}

Wang, Jiafu ^{[1
]}

机构：

[1] Wuhan Univ Technol, Sch Sci, Wuhan 430070, Hubei, Peoples R China

[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China

[3] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China

来源：

MATERIALS LETTERS | 2019年 / 254卷

关键词：

Phase change material; Thermal stability; Crystallization temperature; Electrical properties; Simulation and modeling; THIN-FILMS; DATA RETENTION; CRYSTALLIZATION; CANDIDATE;

D O I：

10.1016/j.matlet.2019.07.049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We comprehensively study the influences of Ti doping on the phase change properties of Sn2Se3 film through experiments and ab initio molecular dynamics simulations. Both the crystallization temperature and the activation energy of Sn2Se3 increase significantly by introducing Ti atoms, indicating enhanced thermal stability. Based on the results of x-ray photoelectron spectroscopy in combination with theoretical calculations, we assume that Ti atoms tend to form covalent bonds with Se in amorphous Sn2Se3. Because of the stronger bond energy of Ti-Se and the change of the bonding environment around Ti atoms, it is more difficult to rearrange the atoms to form long-range order, thus giving rise to the thermal stability of the amorphous phase. Our work shows that Ti doped Sn2Se3 is a promising candidate for the application of next generation non-volatile memory. (C) 2019 Elsevier B.V. All rights reserved.

引用

页码：186 / 189

页数：4

共 16 条

[1] Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications [J].

Chen, Yimin ;

Wang, Guoxiang ;

Shen, Xiang ;

Xu, Tiefeng ;

Wang, R. P. ;

Wu, Liangcai ;

Lu, Yegang ;

Li, Junjian ;

Dai, Shixun ;

Nie, Qiuhua .

CRYSTENGCOMM, 2014, 16 (05) :757-762

[2] Investigation of SnSe, SnSe2, and Sn2Se3 alloys for phase change memory applications [J].

Chung, Kyung-Min ;

Wamwangi, Daniel ;

Woda, Michael ;

Wuttig, Matthias ;

Bensch, Wolfgang .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)

[3] Ab-initio simulations of materials using VASP:: Density-functional theory and beyond [J].

Hafner, Juergen .

JOURNAL OF COMPUTATIONAL CHEMISTRY, 2008, 29 (13) :2044-2078

[4] Fast crystallization and low power of Al-doped Sn2Se3 thin films for phase change memory applications [J].

Hu, Yifeng ;

Li, Simian ;

Lai, Tianshu ;

Song, Sannian ;

Song, Zhitang ;

Zhai, Jiwei .

JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 581 :515-518

[5] Phase transition behaviors of Mo- and nitrogen-doped Ge2Sb2Te5 thin films investigated by in situ electrical measurements [J].

Huang, Yu-Jen ;

Chen, Yen-Chou ;

Hsieh, Tsung-Eong .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (03)

[6] Physical and electrical characteristics of GexSb100-x films for use as phase-change materials [J].

Kim, J. H. ;

Byeon, D. -S. ;

Ko, D. -H. ;

Park, J. H. .

THIN SOLID FILMS, 2018, 659 :1-6

[7] REACTION KINETICS IN DIFFERENTIAL THERMAL ANALYSIS [J].

KISSINGER, HE .

ANALYTICAL CHEMISTRY, 1957, 29 (11) :1702-1706

[8] Phase Change Materials and Their Application to Nonvolatile Memories [J].

Raoux, Simone ;

Welnic, Wojciech ;

Ielmini, Daniele .

CHEMICAL REVIEWS, 2010, 110 (01) :240-267

[9] Monatomic phase change memory [J].

Salinga, Martin ;

Kersting, Benedikt ;

Ronneberger, Ider ;

Jonnalagadda, Vara Prasad ;

Vu, Xuan Thang ;

Le Gallo, Manuel ;

Giannopoulos, Iason ;

Cojocaru-Miredin, Oana ;

Mazzarello, Riccardo ;

Sebastian, Abu .

NATURE MATERIALS, 2018, 17 (08) :681-+

[10] Phase-dependent thermal conductivity of Ge1Sb4Te7 and N:Ge1Sb4Te7 for phase change memory applications [J].

Shin, Sangwoo ;

Kim, Hyung Keun ;

Song, Jiwoon ;

Choi, Doo Jin ;

Cho, Hyung Hee .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (03)

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