Depressed Phase Transition in Solution-Grown VO2 Nanostructures

被引:196
作者
Whittaker, Luisa [1 ]
Jaye, Cherno [2 ]
Fu, Zugen [2 ]
Fischer, Daniel A. [2 ]
Banerjee, Sarbajit [1 ]
机构
[1] SUNY Buffalo, Dept Chem, Buffalo, NY 14260 USA
[2] NIST, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
关键词
X-RAY-ABSORPTION; VANADIUM DIOXIDE; HYDROTHERMAL SYNTHESIS; INSULATOR-TRANSITION; NANOWIRES; OXIDES;
D O I
10.1021/ja902054w
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The first-order metal-insulator phase transition in VO2 is characterized by an ultrafast several-orders-of-magnitude change in electrical conductivity and optical transmittance, which makes this material an attractive candidate for the fabrication of optical limiting elements, thermochromic coatings, and Mott field-effect transistors. Here, we demonstrate that the phase-transition temperature and hysteresis can be tuned by scaling VO2 to nanoscale dimensions. A simple hydrothermal protocol yields anisotropic freestanding single-crystalline VO2 nanostructures with a phase-transition temperature depressed to as low as 32 degrees C from 67 degrees C in the bulk. The observations here point to the importance of carefully controlling the stochiometry and dimensions of VO2 nanostructures to tune the phase transition in this system.
引用
收藏
页码:8884 / 8894
页数:11
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