Anomalous thermal, magnetic and transport properties of U2Rh3Si5

被引：4

作者：

Becker, B ^{[1
]}

Ramakrishnan, S ^{[1
]}

Sullow, S ^{[1
]}

Mattheus, CC ^{[1
]}

Snel, CE ^{[1
]}

Nieuwenhuys, GJ ^{[1
]}

Mydosh, JA ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,MAHARASHTRA,INDIA

来源：

PHYSICA B | 1997年 / 230卷

关键词：

U2Rh3Si5; heat capacity; crystal electric field;

D O I：

10.1016/S0921-4526(96)00553-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Previous studies have indicated U2Rh3Si5 to order antiferromagnetically below 25 K. In this work we investigate the nature of the transition in more detail on high-quality samples using heat capacity c(p), magnetic susceptibility chi and electrical resistance rho. Below T-N we observe an unusually large jump of 100 J/U mol K in c(p), an anomalous decrease in the magnetic susceptibility and a huge drop (a factor of 65) in the electrical resistance. We propose that the dramatic antiferromagnetic ordering is caused by the formation of a two-level system with the corresponding opening of a spin-wave gap.

引用

页码：83 / 85

页数：3

共 12 条

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