Controlled electrostatic gating of carbon nanotube FET devices
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作者:
Artyukhin, Alexander B.
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机构:Lawrence Livermore Natl Lab, Chem & Mat Sci Directorate, Livermore, CA 94550 USA
Artyukhin, Alexander B.
Stadermann, Michael
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机构:Lawrence Livermore Natl Lab, Chem & Mat Sci Directorate, Livermore, CA 94550 USA
Stadermann, Michael
Friddle, Raymond W.
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机构:Lawrence Livermore Natl Lab, Chem & Mat Sci Directorate, Livermore, CA 94550 USA
Friddle, Raymond W.
Stroeve, Pieter
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机构:Lawrence Livermore Natl Lab, Chem & Mat Sci Directorate, Livermore, CA 94550 USA
Stroeve, Pieter
Bakajin, Olgica
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机构:Lawrence Livermore Natl Lab, Chem & Mat Sci Directorate, Livermore, CA 94550 USA
Bakajin, Olgica
Noy, Aleksandr
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Lawrence Livermore Natl Lab, Chem & Mat Sci Directorate, Livermore, CA 94550 USALawrence Livermore Natl Lab, Chem & Mat Sci Directorate, Livermore, CA 94550 USA
Noy, Aleksandr
[1
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机构:
[1] Lawrence Livermore Natl Lab, Chem & Mat Sci Directorate, Livermore, CA 94550 USA
[2] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA
Carbon nanotube transistors are a promising platform for the next generation of nonoptical biosensors. However, the exact nature of the biomolecule interactions with nanotubes in these devices remains unknown, creating one of the major obstacles to their practical use. We assembled alternating layers of oppositely charged polyelectrolytes on the carbon nanotube transistors to mimic gating of these devices by charged molecules. The devices showed reproducible oscillations of the transistor threshold voltage depending on the polarity of the outer polymer layer in the multilayer film. This behavior shows excellent agreement with the predictions of a simple electrostatic model. Finally, we demonstrate that complex interactions of adsorbed species with the device substrate and the surrounding electrolyte can produce significant and sometimes unexpected effects on the device characteristics.