Elimination of enhanced low-dose-rate sensitivity in linear bipolar devices using silicon-carbide passivation

被引：8
作者：
Shaneyfelt, Marty R.
Maher, Michael C.
Camilletti, Robert C.
Schwank, James R.
Pease, Ronald L.
Russell, Brian A.
Dodd, Paul E.
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Natl Semicond Corp, Portland, ME 04106 USA
[3] Dow Corning Corp, Midland, MI 48686 USA
[4] RLP Res, Los Lunas, NM 87031 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 04期
关键词：
enhanced low-dose-rate sensitivity (ELDRS); hardness assurance testing; integrated circuit reliability; integrated circuit testing; linear bipolar integrated circuits; mechanical stress; passivation layers; pre-irradiation elevated temperature stress; radiation effects; radiation hardening (electronics); radiation response; reliability screens; silicon carbide; thermal cycling; thermal stress effects;
D O I：
10.1109/TNS.2006.877981
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The type of final chip passivation layer used to fabricate linear bipolar circuits can have a major impact on the total dose hardness of some circuits. It is demonstrated that National Semiconductor Corporation linear bipolar devices fabricated with only an amorphous silicon carbide passivation layer do not exhibit enhanced low-dose-rate sensitivity (ELDRS), while devices from the same production lot fabricated with other types of passivation layers are ELDRS sensitive. SiC passivation possesses mechanical, electrical and chemical properties that make it compatible with linear device fabrication processes. These properties of SiC passivation layers, combined with the excellent radiation response of devices passivated with SiC, make SiC passivation layers a very attractive choice for devices packaged in either ceramic or plastic-encapsulated packages for use in space environments.
引用
收藏
页码：2027 / 2032
页数：6
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