Ni and Ga diffusion in polycrystalline Ni3Ga

被引：8

作者：

Cermák, J ^{[1
]}

Rothová, V ^{[1
]}

机构：

[1] Inst Phys & Mat, AS CR, CZ-61662 Brno, Czech Republic

来源：

INTERMETALLICS | 2002年 / 10卷 / 08期

关键词：

intermetallics; miscellaneous; diffusion;

D O I：

10.1016/S0966-9795(02)00053-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The volume and grain boundary (GB) diffusion of Ni-63 and Ga-67 radiotracers in polycrystals of Ni3Ga intermetallic was studied in the vicinity of the stoichiometric composition A(3)B (23.5-28.3 at.% Ga). Both volume and GB diffusivity was investigated in the temperature interval 773-1373 K by the residual activity method. The obtained Ga volume diffusivity increases with increasing Ga concentration x(Ga;) the increasing tendency of Ni volume diffusivity with increasing x(Ga) is pronounced at lower temperatures. GB diffusivity of both Ga and Ni in Ni3Ga are close one to another and-contrary to the diffusion behavior of components in Ni3Al-they do not show any significant dependence on x(Ga). (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：765 / 769

页数：5

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