Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315 nm

被引：25

作者：

Smith, SA ^{[1
]}

Hopkins, JM

Hastie, JE

Burns, D

Calvez, S

Dawson, MD

Jouhti, T

Kontinnen, J

Pessa, M

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 15期

关键词：

D O I：

10.1049/el:20045378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 mum is reported. Fundamental-mode continuous-wave output powers > 120 mW were achieved from a cavity volume similar to0.001 mm(3) using a diode-puniped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.

引用

页码：935 / 937

页数：3

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