Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

被引：82

作者：

Kim, Cheolkyu ^{[1
]}

Kang, Dongmin ^{[2
]}

Lee, Tae-Yon ^{[1
]}

Kim, Kijoon H. P. ^{[1
]}

Kang, Youn-Seon ^{[1
]}

Lee, Junho ^{[3
]}

Nam, Sung-Wook ^{[2
]}

Kim, Ki-Bum ^{[2
]}

Khang, Yoonho ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 446711, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[3] Samsung Adv Inst Technol, Analyt Engn Grp, Yongin 446712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 19期

关键词：

antimony compounds; electromigration; germanium compounds; phase change materials; phase change memories; phase separation; transmission electron microscopy; X-ray chemical analysis;

D O I：

10.1063/1.3127223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phase change materials in phase change random access memory (PRAM) undergo very high electrical stress as well as thermal stress during operation. These can cause intrinsic problems in stability of the PRAM devices. We investigate the stability of Ge2Sb2Te5, the most common phase change material for PRAM, under electrical stress. After multiple programming cycles, cross-sectional transmission electron microscopy and energy dispersive analysis show that electromigration as well as incongruent melting causes phase separation by mass movement by which the peak position of Sb and Ge lies shifted toward the cathode and that of Te toward the anode.

引用

页数：3

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