A double-stream Xe:He jet plasma emission in the vicinity of 6.7 nm

被引：18

作者：

Chkhalo, N. I. ^{[1
]}

Garakhin, S. A. ^{[1
]}

Golubev, S. V. ^{[2
]}

Lopatin, A. Ya. ^{[1
]}

Nechay, A. N. ^{[1
]}

Pestov, A. E. ^{[1
]}

Salashchenko, N. N. ^{[1
]}

Toropov, M. N. ^{[1
]}

Tsybin, N. N. ^{[1
]}

Vodopyanov, A. V. ^{[2
]}

Yulin, S. ^{[3
]}

机构：

[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] RAS, Inst Appl Phys, Nizhnii Novgorod 603950, Russia

[3] Fraunhofer Inst Appl Opt & Precis Engn IOF, Albert Einstein Str 7, D-07745 Jena, Germany

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 22期

基金：

俄罗斯科学基金会;

关键词：

GAS PUFF TARGET; X-RAY-EMISSION; EXTREME-ULTRAVIOLET LITHOGRAPHY; ND-YAG LASER; RANGE; METROLOGY;

D O I：

10.1063/1.5016471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of investigations of extreme ultraviolet (EUV) light emission in the range from 5 to 10 nm. The light source was a pulsed "double-stream" Xe:He gas jet target irradiated by a laser beam with a power density of similar to 10(11) W/cm(2). The radiation spectra were measured with a Czerny-Turner monochromator with a plane diffraction grating. The conversion efficiency of the laser energy into EUV radiation caused by Xe+14...+16 ion emission in the range of 6-8 nm was measured using a calibrated power meter. The conversion efficiency of the laser radiation into EUV in the vicinity of 6.7 nm was (2.17 +/- 0.13)% in a 1 nm spectral band. In the spectral band of the real optical system (0.7% for La/B multilayer mirrors) emitted into the half-space, it was (0.1 +/- 0.006)%. The results of this study provide an impetus for further research on laser plasma sources for maskless EUV lithography at a wavelength of 6.7 nm. Published by AIP Publishing.

引用

页数：4

共 25 条

[21] Characterization and optimization of the laser-produced plasma EUV source at 13.5 nm based on a double-stream Xe/He gas puff target
Rakowski, R.
Bartnik, A.
Fiedorowicz, H.
de Dortan, F. de Gaufridy
Jarocki, R.
Kostecki, J.
Mikolajczyk, J.
Ryc, L.
Szczurek, M.
Wachulak, P.
[J]. APPLIED PHYSICS B-LASERS AND OPTICS, 2010, 101 (04): : 773 - 789
[22] Shortwave projection nanolithography
Salashchenko, N. N.
Chkhalo, N. I.
[J]. HERALD OF THE RUSSIAN ACADEMY OF SCIENCES, 2008, 78 (03) : 279 - 285
[23] Scaling LPP EUV sources to meet high volume manufacturing requirements (Conference Presentation)
Schafgans, Alexander A.
Brown, Daniel J.
Fomenkov, Igor V.
Tao, Yezheng
Purvis, Michael
Rokitski, Slava I.
Vaschenko, Georgiy O.
Rafac, Robert J.
Brandt, David C.
[J]. EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VIII, 2017, 10143
[24] Efficient extreme ultraviolet emission from xenon-cluster jet targets at high repetition rate laser illumination
Ter-Avetisyan, S
Vogt, U
Stiel, H
Schnürer, M
Will, I
Nickles, PV
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) : 5489 - 5496
[25] EUV LITHOGRAPHY Lithography gets extreme
Wagner, Christian
Harned, Noreen
[J]. NATURE PHOTONICS, 2010, 4 (01) : 24 - 26

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