A double-stream Xe:He jet plasma emission in the vicinity of 6.7 nm

被引:18
作者
Chkhalo, N. I. [1 ]
Garakhin, S. A. [1 ]
Golubev, S. V. [2 ]
Lopatin, A. Ya. [1 ]
Nechay, A. N. [1 ]
Pestov, A. E. [1 ]
Salashchenko, N. N. [1 ]
Toropov, M. N. [1 ]
Tsybin, N. N. [1 ]
Vodopyanov, A. V. [2 ]
Yulin, S. [3 ]
机构
[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[2] RAS, Inst Appl Phys, Nizhnii Novgorod 603950, Russia
[3] Fraunhofer Inst Appl Opt & Precis Engn IOF, Albert Einstein Str 7, D-07745 Jena, Germany
基金
俄罗斯科学基金会;
关键词
GAS PUFF TARGET; X-RAY-EMISSION; EXTREME-ULTRAVIOLET LITHOGRAPHY; ND-YAG LASER; RANGE; METROLOGY;
D O I
10.1063/1.5016471
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present the results of investigations of extreme ultraviolet (EUV) light emission in the range from 5 to 10 nm. The light source was a pulsed "double-stream" Xe:He gas jet target irradiated by a laser beam with a power density of similar to 10(11) W/cm(2). The radiation spectra were measured with a Czerny-Turner monochromator with a plane diffraction grating. The conversion efficiency of the laser energy into EUV radiation caused by Xe+14...+16 ion emission in the range of 6-8 nm was measured using a calibrated power meter. The conversion efficiency of the laser radiation into EUV in the vicinity of 6.7 nm was (2.17 +/- 0.13)% in a 1 nm spectral band. In the spectral band of the real optical system (0.7% for La/B multilayer mirrors) emitted into the half-space, it was (0.1 +/- 0.006)%. The results of this study provide an impetus for further research on laser plasma sources for maskless EUV lithography at a wavelength of 6.7 nm. Published by AIP Publishing.
引用
收藏
页数:4
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