Scanning Kelvin Probe Microscopy study on Oxide Thin Film Transistor

Thin film transistors (TFT) using oxide channel like InGaZnO are very promising for the transparent and flexible electronics application because of their high performance and optical transparency compared with amorphous silicon or organic semiconductors. In addition to the fundamental transport behaviors, the device reliability is very important and light or bias-dependent characteristics have been intensively studied. In terms of its very thin channel dimension, the surface and interface of the channel should be well understood to analyze and model oxide channel. We report our study on the characterization of oxide channel of TFT using surface-sensitive microscopic tool like scanning Kelvin probe microscopy (SKPM).