Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0.5Zr0.5O2 bilayer system

被引：17

作者：

Das, Dipjyoti ^{[1
]}

Kim, Taeho ^{[1
]}

Gaddam, Venkateswarlu ^{[1
]}

Shin, Changhwan ^{[2
]}

Jeon, Sanghun ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea

[2] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon, South Korea

来源：

SOLID-STATE ELECTRONICS | 2020年 / 174卷

关键词：

Dielectric; Ferroelectric; Negative capacitance; Interface charge density; Hf-Zr-Al-O; Hf0.5Zr0.5O2; FERROELECTRICITY; FILMS; LAYER;

D O I：

10.1016/j.sse.2020.107914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, negative capacitance (NC) effect in the dielectric/ferroelectric (DE/FE) bilayer system has received significant attention due to its potential in achieving sub- 60 mV/decade subthreshold swing in FETs as well as extremely large capacitance density in dynamic random-access memory (DRAM). However, such reports, to date, are primarily based on conventional perovskite FE materials which are not compatible with the present CMOS technology. Herein, we study the interfacial charge density (cri)and negative capacitance (NC) effect in CMOS compatible Hf-Zr-Al-O (DE)/Hf0.5Zr0.5O2 (FE) bilayer system. The DE layer of various thicknesses (5-20 angstrom) was deposited on the top of FE layer (100 angstrom) and the DE layer thickness was found to play a crucial role in determiningcr sigma(i). The NC effect in the aforesaid DE/FE system was suppressed due to the contribution of cri. The sigma(i)at the interface of the DE layer and FE layer was found to be in the range of -0.57 Cm-2 to -0.18 Cm-2 for the DE thickness range of 5-20 angstrom.

引用

页数：6

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