Half-Heusler-like compounds with wide continuous compositions and tunable p- to n-type semiconducting thermoelectrics

被引:50
作者
Dong, Zirui [1 ]
Luo, Jun [1 ,2 ]
Wang, Chenyang [1 ]
Jiang, Ying [2 ]
Tan, Shihua [3 ,4 ]
Zhang, Yubo [3 ,4 ,5 ,6 ]
Grin, Yuri [7 ]
Yu, Zhiyang [8 ]
Guo, Kai [1 ]
Zhang, Jiye [1 ]
Zhang, Wenqing [3 ,4 ,5 ,6 ]
机构
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
[2] Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China
[3] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
[4] Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
[5] Southern Univ Sci & Technol, Guangdong Prov Key Lab Computat Sci & Mat Design, Shenzhen 518055, Guangdong, Peoples R China
[6] Southern Univ Sci & Technol, Shenzhen Municipal KeyLab Adv Quantum Mat & Devic, Shenzhen 518055, Guangdong, Peoples R China
[7] Max Planck Inst Chem Phys Fester Stoffe, Nothnitzer Str 40, D-01187 Dresden, Germany
[8] Fuzhou Univ, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350002, Fujian, Peoples R China
基金
中国国家自然科学基金;
关键词
PERFORMANCE; HEAT;
D O I
10.1038/s41467-021-27795-3
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Half-Heusler and full-Heusler compounds were considered as independent phases with a natural composition gap. Here we report the discovery of TiRu1+xSb (x= 0.15 similar to 1.0) solid solution with wide homogeneity range and tunable p- to n-type semiconducting thermoelectrics, which bridges the composition gap between half- and full-Heusler phases. At the high-Ru end, strange glass-like thermal transport behavior with unusually low lattice thermal conductivity (similar to 1.65 Wm(-1)K(-1) at 340 K) is observed for TiRu1.8Sb, being the lowest among reported half-Heusler phases. In the composition range of 0.15 < x < 0.50, TiRu1+xSb shows abnormal semiconducting behaviors because tunning Ru composition results in band structure change and carrier-type variation simultaneously, which seemingly correlates with the localized d electrons. This work reveals the possibility of designing fascinating half-Heusler-like materials by manipulating the tetrahedral site occupancy, and also demonstrates the potential of tuning crystal and electronic structures simultaneously to realize intriguing physical properties.
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页数:9
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