Physical properties of Cu and Dy co-doped ZnO thin films prepared by radio frequency magnetron sputtering for hybrid organic/inorganic electronic devices

被引:18
作者
Locovei, C. [1 ,2 ]
Coman, D. [1 ]
Radu, A. [1 ]
Ion, L. [1 ,3 ]
Antohe, V. A. [1 ]
Vasile, N. [1 ]
Dumitru, A. [1 ]
Iftimie, S. [1 ]
Antohe, S. [1 ,4 ]
机构
[1] Univ Bucharest, Fac Phys, Magurele 077125, Romania
[2] Natl Inst Mat Phys, Magurele 077125, Romania
[3] UC Louvain, Inst Condensed Matter & Nanosci IMCN, Pl Croix Sud 1, B-1348 Louvain La Neuve, Belgium
[4] Acad Romanian Scientists, 54 Splaiul Independentei, Bucharest, Romania
关键词
Zinc oxide; Copper; Dysprosium; Hybrid heterojunctions; Poly(3-hexylthiophene-2.5-diyl); Copper (II) phthalocyanine; OPTICAL-PROPERTIES; SOL-GEL; LUMINESCENCE; TEMPERATURE; MICROSTRUCTURE; PRESSURE; BAND; RF;
D O I
10.1016/j.tsf.2019.06.027
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Copper (Cu) and dysprosium (Dy) co-doped zinc oxide (ZnO) thin films were fabricated by radio frequency magnetron sputtering (RF-magnetron sputtering) using a homemade target having the atomic percentage of Cu and Dy of 1%, onto optical glass substrates and quartz substrates. The structural, morphological, optical, and electrical properties of fabricated ZnO:(Cu, Dy) structures were analyzed and discussed. It was found that all samples have hexagonal Wurtzite structure. Optical transmission measurements indicate values larger than 75% in the 400-2500 nm ranges. The current-voltage characteristics of hybrid heterojunctions based on ZnO:(Cu, Dy) and poly(3-hexylthiophene-2.5-diyl) (P3HT) or copper (II) phthalocyanine (CuPc) thin films were acquired in the dark, in ambient atmosphere, and they exhibit the typical diode behavior, almost free of electrical hysteresis.
引用
收藏
页码:379 / 384
页数:6
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