Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum

被引：85

作者：

Sun, ZZ ^{[1
]}

Ding, D ^{[1
]}

Gong, Q ^{[1
]}

Zhou, W ^{[1
]}

Xu, B ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1999年 / 31卷 / 12期

基金：

中国国家自然科学基金;

关键词：

quantum dot; SLD; wide spectrum;

D O I：

10.1023/A:1007030119338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should give a wider output spectrum than a conventional quantum well SLD. The device makes use of inhomogeneous broadness of gain spectrum resulting from size inhomogeneity of self-assembled quantum dots grown by Stranski-Krastanow mode. Taking a design made out in the InxGa1-xAs/GaAs system for example, the spectrum characteristics of the device are simulated realistically, 100-200 nm full width of half maximum of output spectrum can be obtained. The dependence of the output spectrum on In composition, size distribution and injection current of the dots active region is also elaborated.

引用

页码：1235 / 1246

页数：12

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