Wideband quantum-dash-in-well superluminescent diode at 1.6 μm

被引：27

作者：

Djie, Hery S. ^{[1
]}

Dimas, Clara E. ^{[1
]}

Ooi, Boon S. ^{[1
]}

机构：

[1] Lehigh Univ, Ctr Opt Technol, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 13-16期

关键词：

optical coherent tomography; quantum-dash; quantum-dot (QD); superlumineseent diode (SLD);

D O I：

10.1109/LPT.2006.880796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate broadband superluminescent diode at similar to 1.6-mu m peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 run. The device produces a low spectrum ripple of 0.3 dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 degrees C under 8 kA/cm(2).

引用

页码：1747 / 1749

页数：3

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