Contrast mechanism due to interface trapped charges for a buried SiO2 microstructure in scanning electron microscopy
被引:13
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作者:
Zhang, Hai-Bo
论文数: 0引用数: 0
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机构:
Xi An Jiao Tong Univ, Dept Elect Sci & Technol, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Dept Elect Sci & Technol, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China
Zhang, Hai-Bo
[1
]
Li, Wei-Qin
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机构:
Xi An Jiao Tong Univ, Dept Elect Sci & Technol, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Dept Elect Sci & Technol, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China
Li, Wei-Qin
[1
]
Wu, Dan-Wei
论文数: 0引用数: 0
h-index: 0
机构:
Xi An Jiao Tong Univ, Dept Elect Sci & Technol, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Dept Elect Sci & Technol, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China
Wu, Dan-Wei
[1
]
机构:
[1] Xi An Jiao Tong Univ, Dept Elect Sci & Technol, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China
来源:
JOURNAL OF ELECTRON MICROSCOPY
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2009年
/
58卷
/
01期
基金:
中国国家自然科学基金;
关键词:
scanning electron microscopy;
image forming;
charging effects;
electron transport;
MONTE-CARLO-SIMULATION;
OVERLAY METROLOGY;
EMISSION YIELD;
BEAM;
INSULATORS;
SIO2-FILMS;
SOLIDS;
D O I:
10.1093/jmicro/dfn024
中图分类号:
TH742 [显微镜];
学科分类号:
摘要:
We clarify the scanning electron microscopic contrast mechanism for imaging a buried SiO2 trench microstructure with interface trapped charges by simulating both electron scattering and transport. Here, the interface trapped charges make the SiO2 film more negatively charged and increase excess holes in the space charge distribution of the electron scattering region. The generated positive surface electric field thus redistributes some emitted secondary electrons and results in the dark contrast. This contrast mechanism is validated by comparing with experiments, and it may also provide an interesting approach for imaging and detecting deep interface trapped charges in insulating films.
机构:
Institute of Semiconductor Physics, Natl. Academy of Sciences of Ukraine, KievInstitute of Semiconductor Physics, Natl. Academy of Sciences of Ukraine, Kiev
Kirillova S.I.
Primachenko V.E.
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机构:
Institute of Semiconductor Physics, Natl. Academy of Sciences of Ukraine, KievInstitute of Semiconductor Physics, Natl. Academy of Sciences of Ukraine, Kiev
Primachenko V.E.
Serba A.A.
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机构:
Institute of Semiconductor Physics, Natl. Academy of Sciences of Ukraine, KievInstitute of Semiconductor Physics, Natl. Academy of Sciences of Ukraine, Kiev
Serba A.A.
Chernobai V.A.
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机构:
Institute of Semiconductor Physics, Natl. Academy of Sciences of Ukraine, KievInstitute of Semiconductor Physics, Natl. Academy of Sciences of Ukraine, Kiev