Near-Field Thermal Transistor

被引:443
作者
Ben-Abdallah, Philippe [1 ]
Biehs, Svend-Age [2 ]
机构
[1] Univ Paris 11, CNRS, Inst Opt, Lab Charles Fabry,UMR 8501, F-91127 Palaiseau, France
[2] Carl von Ossietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germany
关键词
TRANSITION;
D O I
10.1103/PhysRevLett.112.044301
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect transistor that is able to control the flow of heat exchanged by evanescent thermal photons between two bodies. By changing the gate temperature around its critical value, the heat flux exchanged between the hot body (source) and the cold body (drain) can be reversibly switched, amplified, and modulated by a tiny action on the gate. Such a device could find important applications in the domain of nanoscale thermal management and it opens up new perspectives concerning the development of contactless thermal circuits intended for information processing using the photon current rather than the electric current.
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页数:5
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