Modification of Fano resonances by resonant polaron coupling in bulk GaAs

被引:5
作者
Bellani, V
Vina, L
Hey, R
Ploog, K
机构
[1] UNIV AUTONOMA MADRID,DEPT FIS MAT C4,E-28049 MADRID,SPAIN
[2] PAUL DRUDE INST FESTKORPERELEKT,D-10117 BERLIN,GERMANY
关键词
D O I
10.1088/0268-1242/11/10/010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Strong modifications of the magneto-excitonic Fano lineshapes have been observed in the photoluminescence-excitation spectra of bulk GaAs when the energies of the transitions are tuned by an external magnetic field. We identify the origin of these changes as resonant polaronic coupling between the electrons or holes, forming the excitons, with longitudinal-optical phonons, in conduction and valence bands respectively. The resonant polaron effect alters the magneto-excitonic discrete states, destroying the quantum interferences responsible for the Fano asymmetry.
引用
收藏
页码:1411 / 1415
页数:5
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