Analysis of nitride-based quantum well LEDs and novel white LED design

被引：0

作者：

Xiao, D ^{[1
]}

Kim, KW ^{[1
]}

Bedair, SM ^{[1
]}

Zavada, JM ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

LIGHT -EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VIII | 2004年 / 5366卷

关键词：

white LED; quantum well; nitride;

D O I：

10.1117/12.524424

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fundamental electrical and optical properties of strained wurtzite InGaN/GaN-based quantum well light emitting diodes are calculated based on the Rashba-Sheka-Pikus Hamiltonian in the vicinity of the F point. The theoretical results show an excellent correlation with experiments. A novel design of using AlInGaN as quantum barrier is proposed to realize efficient red emission, which is hard to achieve if GaN is used as barrier. To achieve high efficiency the important factors relating to the oscillator strength are discussed in detail.

引用

页码：85 / 96

页数：12

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