Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits

被引:52
作者
Gordon, Luke [1 ]
Abu-Farsakh, Hazem [1 ]
Janotti, Anderson [1 ]
Van de Walle, Chris G. [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
DEFECTS;
D O I
10.1038/srep07590
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Dissipative two-level systems (TLS) have been a long-standing problem in glassy solids over the last fifty years, and have recently gained new relevance as sources of decoherence in quantum computing. Resonant absorption by TLSs in the dielectric poses a serious limitation to the performance of superconducting qubits; however, the microscopic nature of these systems has yet to be established. Based on first-principles calculations, we propose that hydrogen impurities in Al2O3 are the main source of TLS resonant absorption. Hydrogen is an ubiquitous impurity and can easily incorporate in Al2O3. We find that interstitial H in Al2O3 forms a hydrogen bond (O-H center dot center dot center dot O). At specific O-O distances, consistent with bond lengths found in amorphous Al2O3 or near Al2O3 surfaces or interfaces, the H atom feels a double well. Tunneling between two symmetric positions gives rise to resonant absorption in the range of 10 GHz, explaining the experimental observations. We also calculate the expected qubit-TLS coupling and find it to lie between 16 and 20 MHz, consistent with experimental measurements.
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页数:5
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