Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits

被引:52
作者
Gordon, Luke [1 ]
Abu-Farsakh, Hazem [1 ]
Janotti, Anderson [1 ]
Van de Walle, Chris G. [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
DEFECTS;
D O I
10.1038/srep07590
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Dissipative two-level systems (TLS) have been a long-standing problem in glassy solids over the last fifty years, and have recently gained new relevance as sources of decoherence in quantum computing. Resonant absorption by TLSs in the dielectric poses a serious limitation to the performance of superconducting qubits; however, the microscopic nature of these systems has yet to be established. Based on first-principles calculations, we propose that hydrogen impurities in Al2O3 are the main source of TLS resonant absorption. Hydrogen is an ubiquitous impurity and can easily incorporate in Al2O3. We find that interstitial H in Al2O3 forms a hydrogen bond (O-H center dot center dot center dot O). At specific O-O distances, consistent with bond lengths found in amorphous Al2O3 or near Al2O3 surfaces or interfaces, the H atom feels a double well. Tunneling between two symmetric positions gives rise to resonant absorption in the range of 10 GHz, explaining the experimental observations. We also calculate the expected qubit-TLS coupling and find it to lie between 16 and 20 MHz, consistent with experimental measurements.
引用
收藏
页数:5
相关论文
共 50 条
[31]   Thermal annealing behavior of α-Al2O3 scintillation screens [J].
Lederer, S. ;
Akhmadaliev, S. ;
Forck, P. ;
Guetlich, E. ;
Lieberwirth, A. ;
Ensinger, W. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 365 :548-552
[32]   Formation and Evolution Mechanism of the Inclusions of Al2O3•SiO2•CaO and Al2O3•SiO2•CaO•MgO in Seamless Steel Tube Steel [J].
Yang, Wenkui ;
Yang, Jian ;
Zhang, Runhao ;
Sun, Han ;
Song, Jingling ;
Zhao, Yinghui ;
Zhou, Xuan .
STEEL RESEARCH INTERNATIONAL, 2023, 94 (08)
[33]   Permittivity and conductivity of triglycine sulfate films on Al/SiO2 and α-Al2O3 substrates [J].
Balashova, E. V. ;
Krichevtsov, B. B. ;
Lemanov, V. V. .
PHYSICS OF THE SOLID STATE, 2010, 52 (01) :126-131
[34]   Low temperature synthesis of semiconducting α-Al2O3 quantum dots [J].
Nemade, K. R. ;
Waghuley, S. A. .
CERAMICS INTERNATIONAL, 2014, 40 (04) :6109-6113
[35]   Investigation of the electronic structure of Me/Al2O3(0001) interfaces [J].
Eremeev, S. V. ;
Schmauder, S. ;
Hocker, S. ;
Kulkova, S. E. .
PHYSICA B-CONDENSED MATTER, 2009, 404 (14-15) :2065-2071
[36]   Theoretical modeling of charge trapping in crystalline and amorphous Al2O3 [J].
Dicks, Oliver A. ;
Shluger, Alexander L. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (31)
[37]   Structural investigation of low energy ion irradiated Al2O3 [J].
Kumar, Sunil ;
Shah, Sejal ;
Sulania, Indra ;
Singh, Fouran ;
Chakraborty, Arun .
CERAMICS INTERNATIONAL, 2019, 45 (16) :20346-20353
[38]   The Effect of Rh on the Interaction of Co with Al2O3 and CeO2 Supports [J].
Erika Varga ;
Kornélia Baán ;
Gergely Ferenc Samu ;
András Erdőhelyi ;
Albert Oszkó ;
Zoltán Kónya ;
János Kiss .
Catalysis Letters, 2016, 146 :1800-1807
[39]   The Effect of Rh on the Interaction of Co with Al2O3 and CeO2 Supports [J].
Varga, Erika ;
Baan, Kornelia ;
Samu, Gergely Ferenc ;
Erdohelyi, Andras ;
Oszko, Albert ;
Konya, Zoltan ;
Kiss, Janos .
CATALYSIS LETTERS, 2016, 146 (09) :1800-1807
[40]   Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(111)/GeO2 interface after capping with Al2O3 layer [J].
Paleari, S. ;
Molle, A. ;
Accetta, F. ;
Lamperti, A. ;
Cianci, E. ;
Fanciulli, M. .
APPLIED SURFACE SCIENCE, 2014, 291 :3-5