Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

被引:783
作者
Yang, Yuchao [1 ]
Gao, Peng [2 ]
Li, Linze [2 ]
Pan, Xiaoqing [2 ]
Tappertzhofen, Stefan [3 ]
Choi, ShinHyun [1 ]
Waser, Rainer [3 ,4 ]
Valov, Ilia [3 ,4 ]
Lu, Wei D. [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[3] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech 2, D-52074 Aachen, Germany
[4] Res Ctr Julich GmbH, Peter Grunberg Inst 7, D-52425 Julich, Germany
基金
美国国家科学基金会;
关键词
IN-SITU OBSERVATION; CONDUCTING FILAMENT; MEMRISTIVE DEVICES; NUCLEATION; GROWTH;
D O I
10.1038/ncomms5232
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Nanoscale metal inclusions in or on solid-state dielectrics are an integral part of modern electrocatalysis, optoelectronics, capacitors, metamaterials and memory devices. The properties of these composite systems strongly depend on the size, dispersion of the inclusions and their chemical stability, and are usually considered constant. Here we demonstrate that nanoscale inclusions (for example, clusters) in dielectrics dynamically change their shape, size and position upon applied electric field. Through systematic in situ transmission electron microscopy studies, we show that fundamental electrochemical processes can lead to universally observed nucleation and growth of metal clusters, even for inert metals like platinum. The clusters exhibit diverse dynamic behaviours governed by kinetic factors including ion mobility and redox rates, leading to different filament growth modes and structures in memristive devices. These findings reveal the microscopic origin behind resistive switching, and also provide general guidance for the design of novel devices involving electronics and ionics.
引用
收藏
页数:9
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