High-resolution direct-write patterning using focused ion beams

被引:29
作者
Ocola, Leonidas E. [1 ]
Rue, Chad [2 ]
Maas, Diederik [3 ]
机构
[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[2] FEI Co, Hillsboro, OR USA
[3] TNO, Delft, Netherlands
关键词
He; Ne; Si; Ga; microstructure; nanostructure; ion-solid interactions; ion-beam assisted deposition; ion-implantation; lithography (removal); ion-beam processing; LITHOGRAPHY; MICROSCOPY; ENERGY;
D O I
10.1557/mrs.2014.56
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the last few years, significant improvements in sources, columns, detectors, control software, and accessories have enabled a wealth of new focused ion beam applications. In addition, modeling has provided many insights into ion-sample interactions and the resultant effects on the sample. With the knowledge gained, the community has found new ion-beam induced chemistries and ion-beam sources, allowing extending nanostructure fabrication and material deposition to smaller dimensions and better control for direct write and patterning. Insignificant proximity effects in resist-based ion beam lithography, combined with the availability of sub-nm ion spot sizes, opens the way to sub-10 nm structures and dense patterns. Additionally, direct-write ion beam nanomachining can process multilevel structures with arbitrary depths in one single process step, with all the information included in a single standard design file, thus enabling fabrication applications not achievable with any other technique.
引用
收藏
页码:336 / 341
页数:6
相关论文
共 45 条
[31]   Three-dimensional microfluidic mixers using ion beam lithography and micromachining [J].
Palacios, E. ;
Ocola, L. E. ;
Joshi-Imre, A. ;
Bauerdick, S. ;
Berse, M. ;
Peto, L. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (06) :C6I1-C6I6
[32]  
Rudneva M., 2012, MAT RES SOC S P, V1455
[33]  
Rue C, 2007, ISTFA 2007, P312
[34]  
Selinger R.L., 1982, US Patent, Patent No. [4,310,743, 4310743]
[35]   Sub-10-nm nanolithography with a scanning helium beam [J].
Sidorkin, Vadim ;
van Veldhoven, Emile ;
van der Drift, Emile ;
Alkemade, Paul ;
Salemink, Huub ;
Maas, Diederik .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (04) :L18-L20
[36]   Probe current distribution characterization technique for focused ion beam [J].
Tan, Shida ;
Livengood, Richard ;
Greenzweig, Yuval ;
Drezner, Yariv ;
Shima, Darryl .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (06)
[37]   Nanomachining with a focused neon beam: A preliminary investigation for semiconductor circuit editing and failure analysis [J].
Tan, Shida ;
Livengood, Richard ;
Hack, Paul ;
Hallstein, Roy ;
Shima, Darryl ;
Notte, John ;
McVey, Shawn .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (06)
[38]   Gas field ion source and liquid metal ion source charged particle material interaction study for semiconductor nanomachining applications [J].
Tan, Shida ;
Livengood, Richard ;
Shima, Darryl ;
Notte, John ;
McVey, Shawn .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (06) :C6F15-C6F21
[39]   Resolution, masking capability and throughput for direct-write, ion implant mask patterning of diamond surfaces using ion beam lithography [J].
Tripathi, Sarvesh K. ;
Scanlan, Declan ;
O'Hara, Neal ;
Nadzeyka, Achim ;
Bauerdick, Sven ;
Peto, Lloyd ;
Cross, Graham L. W. .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2012, 22 (05)
[40]   Gas-assisted focused electron beam and ion beam processing and fabrication [J].
Utke, Ivo ;
Hoffmann, Patrik ;
Melngailis, John .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (04) :1197-1276