High-resolution direct-write patterning using focused ion beams

被引:28
作者
Ocola, Leonidas E. [1 ]
Rue, Chad [2 ]
Maas, Diederik [3 ]
机构
[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[2] FEI Co, Hillsboro, OR USA
[3] TNO, Delft, Netherlands
关键词
He; Ne; Si; Ga; microstructure; nanostructure; ion-solid interactions; ion-beam assisted deposition; ion-implantation; lithography (removal); ion-beam processing; LITHOGRAPHY; MICROSCOPY; ENERGY;
D O I
10.1557/mrs.2014.56
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the last few years, significant improvements in sources, columns, detectors, control software, and accessories have enabled a wealth of new focused ion beam applications. In addition, modeling has provided many insights into ion-sample interactions and the resultant effects on the sample. With the knowledge gained, the community has found new ion-beam induced chemistries and ion-beam sources, allowing extending nanostructure fabrication and material deposition to smaller dimensions and better control for direct write and patterning. Insignificant proximity effects in resist-based ion beam lithography, combined with the availability of sub-nm ion spot sizes, opens the way to sub-10 nm structures and dense patterns. Additionally, direct-write ion beam nanomachining can process multilevel structures with arbitrary depths in one single process step, with all the information included in a single standard design file, thus enabling fabrication applications not achievable with any other technique.
引用
收藏
页码:336 / 341
页数:6
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