Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy

被引：7
作者：
Zeng, Fanming [1 ]
Zhu, Lihong [1 ]
Liu, Wei [1 ]
Li, Xiaoying [1 ]
Liu, Weicui [1 ]
Chen, Bo-Jhih [2 ]
Lee, Yueh-Chien [2 ]
Feng, Zhe Chuan [3 ,4 ]
Liu, Baolin [1 ]
机构：
[1] Xiamen Univ, Sch Phys & Mech & Elect Engn, Xiamen 361005, Peoples R China
[2] Tungnan Univ, Dept Elect Engn, New Taipei 22202, Taiwan
[3] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan
[4] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 656卷
基金：
中国国家自然科学基金;
关键词：
III-Nitrides; Semipolar; Carrier localization; Electron-phonon interactions; Selective area epitaxy; QUANTUM-WELLS; GAN FILMS; EXCITONS; DYNAMICS; DIODES; BLUE; PHOTOLUMINESCENCE; LUMINESCENCE; EFFICIENCY; EMISSION;
D O I：
10.1016/j.jallcom.2015.09.225
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated optical characteristics and carrier recombination dynamics of {1 (1) over bar 01} and {112 (2) over bar} semipolar InGaN/GaN quantum wells of light-emitting diodes (LEDs) structures grown by selective area epitaxy (SAE). The semipolar samples exhibit higher radiative recombination rates than the polar one at the same temperature. Self-consistent Poisson and 6 x 6 k.p Schrodinger calculation results exhibit the same trend. Moreover, we explained the weakened S-shaped temperature-dependent photoluminescence (PL) peak energy of semipolar samples by their weak phonon-assisted carrier in-plane hopping effect, which is further verified by PL spectra-dependent decay times and temperature-dependent radiative lifetimes. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：881 / 886
页数：6
相关论文
共 17 条
  • [1] Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
    Jeong, Hyun
    Jeong, Hyeon Jun
    Oh, Hye Min
    Hong, Chang-Hee
    Suh, Eun-Kyung
    Lerondel, Gilles
    Jeong, Mun Seok
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [2] Highly Integrated InGaN/GaN Semipolar Micro-Pyramid Light-Emitting Diode Arrays by Confined Selective Area Growth
    Bae, Si-Young
    Kim, Do-Hyung
    Lee, Dong-Seon
    Lee, Seung-Jae
    Baek, Jong Hyeob
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 15 (02) : H47 - H50
  • [3] The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
    Tsai, Ming-Ta
    Chu, Chung-Ming
    Huang, Che-Hsuan
    Wu, Yin-Hao
    Chiu, Ching-Hsueh
    Li, Zhen-Yu
    Tu, Po-Min
    Lee, Wei-I
    Kuo, Hao-Chung
    [J]. NANOSCALE RESEARCH LETTERS, 2014, 9
  • [4] Green Light-Emitting Diodes on Semipolar {11(2)over-bar2} Microfacets Grown by Selective Area Epitaxy
    Cho, Chu-Young
    Han, Sang-Heon
    Lee, Sang-Jun
    Park, Seung-Chul
    Park, Seong-Ju
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (01) : H86 - H89
  • [5] Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes
    Bochkareva, N. I.
    Rebane, Y. T.
    Shreter, Y. G.
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (19)
  • [6] Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
    Li, Zhi
    Kang, Junjie
    Wang, Bo Wei
    Li, Hongjian
    Weng, Yu Hsiang
    Lee, Yueh-Chien
    Liu, Zhiqiang
    Yi, Xiaoyan
    Feng, Zhe Chuan
    Wang, Guohong
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (08)
  • [7] Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template
    Li, Hongjian
    Zhang, Haojun
    Li, Panpan
    Wong, Matthew S.
    Chow, Yi Chao
    Pinna, Sergio
    Klamkin, Jonathan
    DeMierry, Philippe
    Speck, James S.
    Nakamura, Shuji
    DenBaars, Steven P.
    [J]. JOURNAL OF PHYSICS-PHOTONICS, 2020, 2 (03):
  • [8] Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy
    Motohisa, Junichi
    Kameda, Hiroki
    Sasaki, Masahiro
    Tomioka, Katsuhiro
    [J]. NANOTECHNOLOGY, 2019, 30 (13)
  • [9] Polarization-resolved electroluminescence study of InGaN/GaN dot-in-a-wire light-emitting diodes grown by molecular beam epitaxy
    Li, K. H.
    Wang, Q.
    Nguyen, H. P. T.
    Zhao, S.
    Mi, Z.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (05): : 941 - 946
  • [10] Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy
    Li, Shunfeng
    Wang, Xue
    Fuendling, Soenke
    Erenburg, Milena
    Ledig, Johannes
    Wei, Jiandong
    Wehmann, Hergo H.
    Waag, Andreas
    Bergbauer, Werner
    Mandl, Martin
    Strassburg, Martin
    Trampert, Achim
    Jahn, Uwe
    Riechert, Henning
    Joenen, Holger
    Hangleiter, Andreas
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (03)
12