Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy

We have investigated optical characteristics and carrier recombination dynamics of {1 (1) over bar 01} and {112 (2) over bar} semipolar InGaN/GaN quantum wells of light-emitting diodes (LEDs) structures grown by selective area epitaxy (SAE). The semipolar samples exhibit higher radiative recombination rates than the polar one at the same temperature. Self-consistent Poisson and 6 x 6 k.p Schrodinger calculation results exhibit the same trend. Moreover, we explained the weakened S-shaped temperature-dependent photoluminescence (PL) peak energy of semipolar samples by their weak phonon-assisted carrier in-plane hopping effect, which is further verified by PL spectra-dependent decay times and temperature-dependent radiative lifetimes. (C) 2015 Elsevier B.V. All rights reserved.