The beam performance of the Genus Tandetron 1520 MeV implanter

被引：0

作者：

Tokoro, N

Sakase, T

Bowen, CM

Maciejowski, PE

OConnor, JP

机构：

来源：

ION IMPLANTATION TECHNOLOGY - 96 | 1997年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of the high energy (MeV) implantation process has been expanded into mass semiconductor production lines in the past couple of years mainly for process simplification and associated cost reduction. In order to meet this requirement, Genus Inc. has introduced its third generation high energy ion implanter ''Tandetron 1520'' with a significantly reduced system foot print compared to its predecessors, the Genus G1500 and the G1510 MeV implanters. This paper describes the basic beam line design as well as the actual beam performance of boron and phosphorus for the system.

引用

页码：443 / 446

页数：4

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