LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers

被引：41

作者：

Chromik, S. ^{[1
]}

Strbik, V. ^{[1
]}

Dobrocka, E. ^{[1
]}

Roch, T. ^{[2
]}

Rosova, A. ^{[1
]}

Spankova, M. ^{[1
]}

Lalinsky, T. ^{[1
]}

Vanko, G. ^{[1
]}

Lobotka, P. ^{[1
]}

Ralbovsky, M. ^{[3
]}

Choleva, P. ^{[4
]}

机构：

[1] SAS, Inst Elect Engn, Bratislava 84104, Slovakia

[2] Comenius Univ, Fac Math Phys & Informat, Dept Expt Phys, Bratislava 84248, Slovakia

[3] Slovak Inst Metrol, Bratislava 84255, Slovakia

[4] Vorarlberg Univ Appl Sci, A-6850 Dornbirn, Austria

来源：

APPLIED SURFACE SCIENCE | 2014年 / 312卷

关键词：

LSMO thin films; BTO/CeO2/YSZ buffered SOI substrate; Pulsed laser deposition; TCR coefficient;

D O I：

10.1016/j.apsusc.2014.05.051

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

La0.67Sr0.33MnO3 (LSMO) thin films have been grown by a pulsed laser deposition (PLD) on Bi4Ti3O12(BTO)/CeO2/YSZ buffered silicon-on-insulator (SOI) substrates. We compare the properties of these films with results of other authors. We analyse structural properties of LSMO/BTO/CeO2/YSZ/SOI multilayer structure prepared using PLD. Electrical measurements have shown that the temperature corresponding to maximum of resistance derivative (operating temperature of a microbolometer) is about 330 K (well above room temperature) and the highest resistivity of metal-insulator transition is at temperature (T-p) above 400 K. Temperature coefficient of the resistance (TCR) has achieved values of 3.4% K-1 at 325 K for some LSMO films. Transmission electron microscopy analysis has confirmed epitaxial growth of all the layers and showed a mosaic character of the LSMO films due to strain relaxation. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：30 / 33

页数：4

共 8 条

[1] Significant increasing of onset temperature of FM transition in LSMO thin films [J].