Effect of ALD Reactants on Blistering of Aluminum Oxide Films on Crystalline Silicon

被引：0

作者：

Li, Shuo ^{[1
]}

Repo, Paivikki ^{[1
]}

von Gastrow, Guillaume ^{[1
]}

Bao, Yameng ^{[1
]}

Savin, Hele ^{[1
]}

机构：

[1] Aalto Univ, Espoo 02150, Finland

来源：

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年

关键词：

thin films; coatings; aluminum compounds; surface treatment; delamination;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Atomic layer deposited aluminum oxide (Al2O3) has in recent years proven to be a promising surface passivation material for crystalline silicon solar cells. However, blistering in Al2O3 films is a common problem deteriorating the surface passivation quality. Here, blistering is studied from material aspects including film thickness, film composition and postdeposition heat treatment. We show how thicker films, higher annealing temperatures and longer annealing times lead to more severe blistering and demonstrate how blistering can be avoided by using either O-3 as the oxidant or depositing a thin TiO2 layer at the silicon interface.

引用

收藏

页码：1265 / 1267

页数：3

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