Diamond CVD film formation onto WC-Co substrates using a thermally nitrided Cr diffusion-barrier

Diamond film deposition onto WC-Co substrates exhibits several limitations regarding the final diamond quality in the film and its adhesion due to the chemical interaction between the Co in the substrate and the diamond CVD environment. In the present study, the use of a similar to 1.5 mu m thermally nitrided Cr interlayer was examined as an effective diffusion barrier throughout the CVD process. Nitridation of the Cr PVD layer in NH3 environment resulted in the formation of a graded CrN/Cr2N layer comprised mainly of the CrN phase, accompanied with the formation of a porous 'net-like' microstructure at the surface. During both thermal nitridation and exposure to the CVD environment up to 360 min, the diffusion of C and Co from the substrate into the interlayer was limited to the region adjacent to the Cr-N interlayer/WC-Co substrate interface, which contained the Cr2N phase. In this region, the Co interacted with the Cr lattice to form a CoCr phase, which was suggested to enhance the chemical binding between the interlayer and the substrate. The region containing the CrN phase was suggested to act as an effective diffusion barrier due to its fully occupied interstitial sites and relatively high crystalline density compared to the underlying Cr2N phase. It was evident that the deleterious effects of Co during the CVD process were successfully suppressed using the Cr-N interlayer and the deposited diamond film exhibited improved adhesion and higher diamond quality. The formation of phases within the interlayer during nitridation and the diamond CVD process, and diamond quality evaluation in the deposited films were investigated by complementary techniques: SEM, XRD, XPS, SIMS and Raman spectroscopy. (C) 2013 Elsevier B.V. All rights reserved.