Electronic structures of Ba-on-Alq3 interfaces and device characteristics of organic light-emitting diodes based on these interfaces

被引：7

作者：

Lim, Jong Tae ^{[1
]}

Yeom, Geun Young ^{[1
]}

Lhm, Kyuwook ^{[2
,3
]}

Kang, Tai-Hee ^{[2
,3
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] POSTECH, Dept Phys, Pohang 790784, South Korea

[3] POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 08期

关键词：

barium; charge injection; dissociation; electronic structure; Fermi level; interface states; organic light emitting diodes; organic semiconductors; semiconductor-metal boundaries; surface chemistry; METAL;

D O I：

10.1063/1.3106604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The device performance of organic light-emitting diodes was significantly improved by inserting a Ba coverage (Theta(Ba)) of 1 nm between tris(8-quinolinolato)aluminum (III) (Alq(3)) and the cathode. This improvement was attributed to the lowering of the electron-injecting barrier height that was induced by the formation of a new gap state from an interfacial chemical reaction, as well as band bending due to Fermi level pinning. However, the device with Theta(Ba) above 1 nm showed poor device performance. The spectroscopic results indicated that the Alq(3) molecules started to decompose by the reaction between Ba and the phenoxide moiety of the molecule.

引用

页数：4

共 13 条

[1] Metal chelates as emitting materials for organic electroluminescence [J].

Chen, CH ;

Shi, JM .

COORDINATION CHEMISTRY REVIEWS, 1998, 171 :161-174

[2] Investigation of the interface formation between calcium and tris-(8-hydroxy quinoline) aluminum [J].

Choong, VE ;

Mason, MG ;

Tang, CW ;

Gao, YG .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2689-2691

[3] General observation of n-type field-effect behaviour in organic semiconductors [J].

Chua, LL ;

Zaumseil, J ;

Chang, JF ;

Ou, ECW ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

NATURE, 2005, 434 (7030) :194-199

[4] Atom-resolved electronic spectra for Alq3 from theory and experiment [J].

Curioni, A ;

Andreoni, W ;

Treusch, R ;

Himpsel, FJ ;

Haskal, E ;

Seidler, P ;

Heske, C ;

Kakar, S ;

van Buuren, T ;

Terminello, LJ .

APPLIED PHYSICS LETTERS, 1998, 72 (13) :1575-1577

[5]

Ishii H, 1999, ADV MATER, V11, P605, DOI 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO

[6]

2-Q

[7] Metal-induced gap states in epitaxial organic-insulator/metal interfaces [J].

Kiguchi, M ;

Arita, R ;

Yoshikawa, G ;

Tanida, Y ;

Ikeda, S ;

Entani, S ;

Nakai, I ;

Kondoh, H ;

Ohta, T ;

Saiki, K ;

Aoki, H .

PHYSICAL REVIEW B, 2005, 72 (07)

[8] High efficiency and long lifetime OLED based on a metal-doped electron transport layer [J].

Lee, JH ;

Wu, MH ;

Chao, CC ;

Chen, HL ;

Leung, MK .

CHEMICAL PHYSICS LETTERS, 2005, 416 (4-6) :234-237

[9] Electron injection in "electron-only" devices based on a symmetric metal/silole/metal structure [J].

Palilis, LC ;

Uchida, M ;

Kafafi, ZH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2004, 10 (01) :79-88

[10] Organometallic chemistry at the magnesium-tris(8-hydroxyquinolino)aluminum interface [J].

Shen, CF ;

Hill, IG ;

Kahn, A ;

Schwartz, J .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (22) :5391-5392

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