Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes

被引：156

作者：

Boroditsky, M

Gontijo, I

Jackson, M

Vrijen, R

Yablonovitch, E ^{[1
]}

Krauss, T

Cheng, CC

Scherer, A

Bhat, R

Krames, M

机构：

[1] Univ Calif Los Angeles, Los Angeles, CA 90095 USA

[2] Univ Glasgow, Dept Elect Engn, Glasgow G12 8LT, Lanark, Scotland

[3] CALTECH, Pasadena, CA 91125 USA

[4] BELLCORE, Corning, NY 14831 USA

[5] LumiLed, San Jose, CA 95131 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 07期

关键词：

D O I：

10.1063/1.372372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes. (C) 2000 American Institute of Physics. [S0021-8979(00)01107-5].

引用

页码：3497 / 3504

页数：8

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