Electron-correlation-originated negative magnetoresistance in a system having a partly flat band

被引:25
作者
Arita, R [1 ]
Kuroki, K [1 ]
Aoki, H [1 ]
机构
[1] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan
关键词
D O I
10.1103/PhysRevB.61.3207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Inspired from an experimentally examined organic conductor, a mechanism for negative magnetoresistance is proposed for repulsively interacting electrons on a lattice whose band dispersion contains a flat portion (a flat bottom below a dispersive part here). When the Fermi level lies in the flat part, the electron correlation should cause ferromagnetic spin fluctuations to develop with an enhanced susceptibility. A relatively small magnetic field will then shift the majority-spin Fermi level to the dispersive part, resulting in a negative magnetoresistance. We have actually confirmed the idea by calculating the conductivity in magnetic fields, with the fluctuation exchange approximation, for the repulsive Hubbard model on a square lattice having a large second nearest-neighbor hopping.
引用
收藏
页码:3207 / 3210
页数:4
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