Design and optimization of high-performance 1.3 μm VCSELs

被引：18

作者：

Piprek, J ^{[1
]}

Mehta, M ^{[1
]}

Jayaraman, V ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XII | 2004年 / 5349卷

关键词：

long-wavelength vertical-cavity surface-emitting laser diode; VCSEL; tunnel junction; wafer bonding; numerical simulation;

D O I：

10.1117/12.543062

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper discusses the design and the internal device physics of novel high-performance vertical-cavity surface-emitting lasers (VCSELs) emitting at 1.32 mum wavelength. Our VCSEL design features intra-cavity ring contacts, strain-compensated AlGaInAs quantum wells, and an AlInAs/InP tunnel junction. The tunnel junction is laterally confined forming an aperture for cur-rent injection and wave guiding. Undoped AlGaAs/GaAs mirrors; are bonded on both sides to the InP-based active region. These devices have recently demonstrated continuous-wave (CW) lasing at stage temperatures up to 134degreesC, the highest temperature reported thus far for any long-wavelength VCSEL. In order to increase the single mode output power at high temperatures, we simulate, analyze, and optimize our VCSEL using advanced numerical software tools. The two-dimensional model self-consistently combines electrical, optical, thermal and gain calculations. It gives good agreement with measurements after careful calibration of material parameters. Design optimization promises single mode output power of 2mW in CW operation at 80degreesC ambient temperature.

引用

页码：375 / 384

页数：10

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