Mechanism of Current Flow in a Au-Ti-Al-Ti-n+-GaN Ohmic Contact in the Temperature Range of 4.2-300 K

被引：4

作者：

Sachenko, A. V. ^{[1
]}

Belyaev, A. E. ^{[1
]}

Boltovets, N. S. ^{[2
]}

Konakova, R. V. ^{[1
]}

Kapitanchuk, L. M. ^{[3
]}

Sheremet, V. N. ^{[1
]}

Sveshnikov, Yu N. ^{[4
]}

Pilipchuk, A. S. ^{[5
]}

机构：

[1] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] State Enterprise Res Inst Orion, UA-03057 Kiev, Ukraine

[3] Natl Acad Sci Ukraine, Paton Elect Welding Inst, UA-03068 Kiev, Ukraine

[4] ZAO Elma Malakhit, Moscow 124460, Russia

[5] Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 10期

关键词：

Ohmic Contact; Contact Resistivity; Gallium Nitride; Current Transfer; Contact Metallization;

D O I：

10.1134/S106378261410025X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature dependence of the contact resistivity rho(c)(T) of Au-Ti-Al-Ti-n(+)-GaN ohmic contacts is studied experimentally and substantiated theoretically in the temperature range T = 4.2-300 K. It is shown that the saturation portion of rho(c)(T) is observed in the low-temperature measurement region (4.2-50 K). As the temperature increases, rho(c) decreases by the exponential law. The experimental and calculated dependences rho(c)(T) are in agreement. The obtained results make it possible to conclude the field nature of the current transfer for the saturation region of rho(c)(T) and the thermal-field one, for the exponential region.

引用

页码：1308 / 1311

页数：4

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