Monte Carlo Simulation of Electron Trajectory in Solid for Electron Beam Lithography

We have developed a GUI(Graphical User Interface)-based Monte Carlo simulation tool for electron beam lithography. Simulation was executed by changing initial energy, thickness of resist, and target material. We focused on penetration range, backscattering coefficient and spatial distribution of lost energy. Comparison with other theory indicates that our simulation is reliable in the 10-50keV range of the energy of the electron. It seems that backscattering coefficient is strongly affected by the kind of atoms in the target, not initial energy.