High extinction ratio and saturation power traveling-wave electroabsorption modulator

被引：43

作者：

Chiu, YJ ^{[1
]}

Chou, HF ^{[1
]}

Kaman, V ^{[1
]}

Abraham, P ^{[1
]}

Bowers, JE ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 06期

关键词：

electroabsorption; high extinction ration; high saturation power; high speed; low driving voltage; modulator; traveling wave;

D O I：

10.1109/LPT.2002.1003095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAsP multiquantum-well traveling-wave electroabsorption modulator is demonstrated with high extinction ratio and modulation efficiency. By designing a strain-compensated quantum-well active region with traveling-wave design, high saturation power (>14 dBm) for >20-GHz high-speed performance (1.5 dB drop at 20 GHz) is achieved. Due to high modulation efficiency (> 30 dB/V for 0 to 1 V 40-dB extinction ratio in 2 V), error free 10-Gb/s operation with 1 V(p-p) driving voltage is obtained. By comparing codirections and counter-directions of optical and microwave interactions, pulse generation at 40 GHz shows that the traveling-wave performance has an advantage for short pulse with high-power output, where pulsewidth of as short as 4.5 ps is obtained in this kind of devices.

引用

页码：792 / 794

页数：3

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