Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

被引：27
作者：
Jia, Caihong [1 ]
Li, Jiachen [1 ]
Yang, Guang [1 ]
Chen, Yonghai [2 ,3 ]
Zhang, Weifeng [1 ]
机构：
[1] Henan Univ, Sch Phys & Elect, Lab Low Dimens Mat Sci, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China
[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2018年 / 13卷
基金：
中国国家自然科学基金;
关键词：
Ferroelectric; Asymmetric resistive switching; Ferroelectric/semiconductor heterojunctions; TUNNEL-JUNCTIONS; ELECTRORESISTANCE;
D O I：
10.1186/s11671-018-2513-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 10(5) ns under -8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.
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页数：6
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