Device simulation and modeling of microcrystalline silicon solar cells

被引：9

作者：

Takakura, H ^{[1
]}

Hamakawa, Y ^{[1
]}

机构：

[1] Ritsumeikan Univ, Fac Sci & Engn, Dept Photon, Shiga 5258577, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期

基金：

日本学术振兴会;

关键词：

device simulation; microcrystalline Si solar cell; grain boundary; amorphous silicon; tandem solar cell; bottom cell; recombination loss; optimum design;

D O I：

10.1016/S0927-0248(02)00108-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Device modeling for p-i-n junction basis thin film microcrystalline Si solar cells has been examined with a simple model of columnar grain structure utilizing two-dimensional device simulator. The simulation results of solar cell characteristics show that open-circuit voltage (V-oc) and fill factor considerably depend on structural parameters such as grain size and acceptor doping in intrinsic layer, while short-circuit current density (J(sc)) is comparatively stable by built-in electric field in the i-layer. It is also found that conversion efficiency of more than 16% could be expected with 1 mum grain size and well-passivated condition with 10 mum thick i-layer and optical confinement. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：479 / 487

页数：9

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