Bipolar resistance switching in the fully transparent BaSnO3-based memory device

被引：3
作者：
Zhang Ting [1 ,2 ]
Yin Jiang [1 ]
Zhao Gao-Feng [2 ]
Zhang Wei-Feng [2 ]
Xia Yi-Dong [1 ]
Liu Zhi-Guo [1 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Henan Univ, Sch Phys & Elect, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
来源：
CHINESE PHYSICS B | 2014年 / 23卷 / 08期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
transparent resistive random access memory; resistance switching; oxygen vacancy; BaSnO3;
D O I：
10.1088/1674-1056/23/8/087304
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interfacial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.
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页数：6
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