A new photoluminescence band in copper-contaminated n-type Czochralski silicon

被引：1
作者：
Xu, Jin [1 ,2 ,3 ]
Xie, Tingting [1 ]
Lv, Yaochao [1 ]
Ji, Chuan [1 ]
机构：
[1] Xiamen Univ, Coll Mat, Dept Mat Sci & Engn, Xiamen 361005, Fujian, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Xiamen Univ, Fujian Prov Key Lab Fire Retardant Mat, Xiamen 361005, Fujian, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 407卷
基金：
中国国家自然科学基金;
关键词：
Characterization; Impurities; Czochralski method; Semiconducting materials; CRYSTALLINE SILICON; POINT-DEFECTS; WAFERS; DISLOCATIONS;
D O I：
10.1016/j.jcrysgro.2014.09.001
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
By means of photoluminescence (PL) method, a new intense emission line located at about 0.97 eV (the position of the maximum value varies from 1281 nm to 1285 nm) was observed in Cu-contaminated silicon wafers subjected to rapid thermal processing (RTP) in different atmospheres, which is proved to be related with copper. It was found that the intensity of the newly found PL line increased with the introduced vacancies. Based on this, the origin of the line is ascribed to be the copper-vacancy complex. Furthermore, it was revealed that the intensity of the new band decreased with increasing copper precipitates, indicating that copper precipitates suppress the formation of this copper-related PL center. Considering that the copper complex can be significantly suppressed by copper precipitates and that vacancies were introduced into silicon wafers by RTP, the newly formed band is further confirmed to originate from the copper-vacancy complex. (C) 2014 Elsevier B.V. All rights reserved.
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页码：48 / 51
页数：4
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