Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500-1600 nm

被引：3

作者：

Bobretsova, Yu K. ^{[1
]}

Veselov, D. A. ^{[1
]}

Voronkova, N. V. ^{[1
]}

Slipchenko, S. O. ^{[1
]}

Strelets, V. A. ^{[1
]}

Bogdanovich, M., V ^{[2
]}

Shpak, P., V ^{[2
]}

Ladugin, M. A. ^{[3
]}

Marmalyuk, A. A. ^{[3
,4
]}

Pikhtin, N. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, Politekhn Skaya Ul 26, St Petersburg 194021, Russia

[2] Natl Acad Sci Belarus, BI Stepanov Inst Phys, Prosp Nezavisimosti 68-2, Minsk 220072, BELARUS

[3] OJSC MF Stelmakh Polus Res Inst, Ul Vvedenskogo 3,Stroenie 1, Moscow 117342, Russia

[4] Natl Res Nucl Univ MEPhI, Kashiskoe Sh 31, Moscow 115409, Russia

来源：

QUANTUM ELECTRONICS | 2019年 / 49卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

absorption coefficient; semiconductor laser; internal optical losses; pulsed pumping; energy barrier; ultra-narrow waveguide; SATURABLE ABSORBER;

D O I：

10.1070/QEL16956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A laser source for bleaching passive -switches of erbium-ytterbium lasers is developed and studied. The developed and studied compact pulsed module (peak power exceeding 10 W in a pulse with a duration of 1 mu s at a wavelength around 1551) nm) is made on the basis of a semiconductor lasers with an ultra-narrow waveguide integrated with a pulsed pump card. To optimise the output laser characteristics, a series resistance was used in the laser pump circuit. The powers of the free-space and fibre-coupled modules at a temperature of 25 degrees C arc 15 and 12 W, respectively, at a pulse shape close to rectangular.

引用

页码：488 / 492

页数：5

共 18 条

[1]

[Anonymous], 2014, 6082512014 IEC

[2]

Bloom S., 2003, J OPT NETW, V2, P178, DOI [10.1364/JON.2.000178, DOI 10.1364/JON.2.000178, DOI 10.1109/11:[2006.885252]

[3]

Bogdanovich M. V., 2018, 6 RUSS S INT PART SE

[4] Optical triggering of a Q-switched Nd:YAG laser via transverse bleaching of a Cr:YAG saturable absorber [J].

Cole, Brian ;

Lei, Jonathan ;

DiLazaro, Tom ;

Schilling, Bradley ;

Goldberg, Lew .

APPLIED OPTICS, 2009, 48 (31) :6008-6014

[5]

Hecht J, 2018, OPT PHOTONICS NEWS, V29, P26

[6]

Karlsson G, 2001, OSA TRENDS OPT PHOTO, V50, P72

[7] Wavelength-Stabilized High-Pulse-Power Laser Diodes for Automotive LiDAR [J].

Knigge, Andrea ;

Klehr, Andreas ;

Wenzel, Hans ;

Zeghuzi, Anissa ;

Fricke, Joerg ;

Maassdorf, Andre ;

Liero, Armin ;

Traenkle, Guenther .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (08)

[8] Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70 % [J].

Ladugin, M. A. ;

Marmalyuk, A. A. ;

Padalitsa, A. A. ;

Bagaev, T. A. ;

Andreev, A. Yu. ;

Telegin, K. Yu. ;

Lobintsov, A. V. ;

Davydova, E. I. ;

Sapozhnikov, S. M. ;

Danilov, A. I. ;

Podkopaev, A. V. ;

Ivanova, E. B. ;

Simakov, V. A. .

QUANTUM ELECTRONICS, 2017, 47 (04) :291-293

[9] Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm [J].

Marmalyuk, A. A. ;

Ryaboshtan, Yu. L. ;

Gorlachuk, P. V. ;

Ladugin, M. A. ;

Padalitsa, A. A. ;

Slipchenko, S. O. ;

Lyutetskiy, A. V. ;

Veselov, D. A. ;

Pikhtin, N. A. .

QUANTUM ELECTRONICS, 2018, 48 (03) :197-200

[10] Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides [J].

Marmalyuk, A. A. ;

Ryaboshtan, Yu. L. ;

Gorlachuk, P. V. ;

Ladugin, M. A. ;

Padalitsa, A. A. ;

Slipchenko, S. O. ;

Lyutetskiy, A. V. ;

Veselov, D. A. ;

Pikhtin, N. A. .

QUANTUM ELECTRONICS, 2017, 47 (03) :272-274

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