Crystallization dynamics of nitrogen-doped Ge2Sb2Te5

被引：95
作者：
Shelby, Robert M. [1 ]
Raoux, Simone [1 ]
机构：
[1] IBM Corp, Almaden Res Ctr, Macronix PCRAM Joint Project, San Jose, CA 95120 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 10期
关键词：
amorphous semiconductors; antimony compounds; crystallisation; germanium compounds; nitrogen; semiconductor doping; semiconductor thin films; sputtered coatings; LASER-INDUCED CRYSTALLIZATION; OPTICAL-RECORDING MEDIA; PHASE-CHANGE MEMORY; GETE-BASED ALLOYS; THIN-FILMS; NUCLEATION; GROWTH; BEHAVIOR; OXYGEN;
D O I：
10.1063/1.3126501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystallization of amorphous Ge2Sb2Te5 (GST) doped with nitrogen is studied with pulsed laser heating. The crystallization time of sputter-deposited films is increased by doping by as much as 100x for nitrogen concentrations of the order of 12 at. % in as-deposited amorphous films. Suppression of the formation of critical crystal nuclei is found to be responsible. The crystallization of melt-quenched amorphous material is also slowed by doping but less dramatically.
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页数：6
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