Crystallization dynamics of nitrogen-doped Ge2Sb2Te5

被引：95

作者：

Shelby, Robert M. ^{[1
]}

Raoux, Simone ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, Macronix PCRAM Joint Project, San Jose, CA 95120 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 10期

关键词：

amorphous semiconductors; antimony compounds; crystallisation; germanium compounds; nitrogen; semiconductor doping; semiconductor thin films; sputtered coatings; LASER-INDUCED CRYSTALLIZATION; OPTICAL-RECORDING MEDIA; PHASE-CHANGE MEMORY; GETE-BASED ALLOYS; THIN-FILMS; NUCLEATION; GROWTH; BEHAVIOR; OXYGEN;

D O I：

10.1063/1.3126501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystallization of amorphous Ge2Sb2Te5 (GST) doped with nitrogen is studied with pulsed laser heating. The crystallization time of sputter-deposited films is increased by doping by as much as 100x for nitrogen concentrations of the order of 12 at. % in as-deposited amorphous films. Suppression of the formation of critical crystal nuclei is found to be responsible. The crystallization of melt-quenched amorphous material is also slowed by doping but less dramatically.

引用

页数：6

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