Comparison of raised source/drain versus raised extension in ultra-thin body, fully-depleted-SOI, including effects of BEOL via capacitances

被引：2

作者：

Egley, JL

Vandooren, A

Winstead, B

Verret, E

Workman, C

White, B

Nguyen, BY

机构：

[1] Motorola Inc, Adv Prod Res & Dev Lab, Tempe, AZ 85284 USA

[2] Motorola Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA

[3] Motorola Inc, Front End Technol Simulat, Austin, TX 78721 USA

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 09期

关键词：

fully depleted SOI; FDSOI; raised SD extension; raised S/D;

D O I：

10.1016/j.sse.2004.03.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Raised source/drain (S/D) or raised extension in fully-depleted-SOI (FDSOI) is necessary to boost saturation current, because of increased resistance from the very thin film. We demonstrate that the choice of raising the extension versus the S/D, will depend upon the maximum achievable mobility in the structure at a 60 nm physical gate length. We also study the effects of minimum BEOL via spacing on performance, and its consequence on choosing a raised extension or S/D. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1607 / 1612

页数：6

共 10 条

[1] Equations of state for silicon inversion layers [J].