Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

被引：15

作者：

Naik, H. ^{[1
]}

Tang, K. ^{[1
]}

Chow, T. P. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12181 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

4H-SiC MOSFETs; graphite cap; inversion layer mobility;

D O I：

10.4028/www.scientific.net/MSF.615-617.773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of using a graphite capping layer during implant activation anneal oil the performance of 4H-SiC MOSFETs has been evaluated. Two sets of samples, one with the graphite cap and another without, with a gate oxide process consisting of a low-temperature deposited oxide followed by NO anneal at 1175 degrees C for 2hrs were used for characterization. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Half mobility have been extracted for the two processes.

引用

页码：773 / 776

页数：4

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