Three-dimensional numerical simulation of flow, thermal and oxygen distributions for a Czochralski silicon growth with in a transverse magnetic field

被引：33

作者：

Chen, Jyh-Chen ^{[1
]}

Chiang, Pei-Yi ^{[1
]}

Chang, Ching-Hsin ^{[1
]}

Teng, Ying-Yang ^{[2
]}

Huang, Cheng-Chuan ^{[3
]}

Chen, Chun-Hung ^{[4
]}

Liu, Chien-Cheng ^{[4
]}

机构：

[1] Natl Cent Univ, Dept Mech Engn, Jhongli 320, Taiwan

[2] Chung Shan Inst Sci & Technol, Taoyuan, Taiwan

[3] Genesis Photon Inc, Tainan, Taiwan

[4] Sino Amer Silicon Prod Inc, Chunan, Miao Li, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 401卷

关键词：

3D Numerical simulation; Transverse magnetic field; Czochralski crystal growth; Oxygen concentration; Semiconductor silicon; MELT-CRYSTAL INTERFACE; MULTICRYSTALLINE SILICON; SOLIDIFICATION;

D O I：

10.1016/j.jcrysgro.2014.01.028

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A three-dimensional numerical simulation has been performed to understand the motion of the melt flow and thermal field during the Czochralski silicon single crystal growth process under the influence of a transverse magnetic field. With the application of a transverse magnetic field, the velocity, temperature and oxygen concentration fields in the melt become three-dimensional and asymmetric. Stronger downward flow motion is formed under the melt-crystal interface which can prevent the movement of oxygen impurities towards the melt-crystal interface. This may explain why the presence of a transverse magnetic field decreases the oxygen concentration level along the melt-crystal interface. The uniformity of the oxygen concentration at the melt-crystal interface is also improved when the magnetic field is applied. There is an increase in either the crystal diameter or the crucible rotation rate, and the oxygen concentration level becomes greater. The uniformity of oxygen concentration is better for higher crystal diameters, (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：813 / 819

页数：7

共 15 条

[1]

[Anonymous], 2010, CGSIM FLOW MOD VER 3

[2] Numerical simulation of oxygen transport during the CZ silicon crystal growth process [J].