Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 x 106

被引：93

作者：

Guha, Biswarup ^{[1
]}

Marsault, Felix ^{[2
]}

Cadiz, Fabian ^{[3
]}

Morgenroth, Laurence ^{[4
]}

Ulin, Vladimir ^{[5
]}

Berkovitz, Vladimir ^{[5
]}

Lemaitre, Aristide ^{[2
]}

Gomez, Carmen ^{[2
]}

Amo, Alberto ^{[2
]}

Combrie, Sylvain ^{[6
]}

Gerard, Bruno ^{[7
]}

Leo, Giuseppe ^{[1
]}

Favero, Ivan ^{[1
]}

机构：

[1] Univ Paris Diderot, CNRS UMR 7162, Sorbonne Paris Cite, Mat & Phenomenes Quant, 10 Rue Alice Domon & Leonie Duquet, F-75013 Paris, France

[2] Univ Paris Saclay, Univ Paris Sud, Ctr Nanosci & Nanotechnol, CNRS,Marcoussis C2N, Route Nozay, F-91460 Marcoussis, France

[3] Ecole Polytech, Phys Mat Condensee Lab, CNRS UMR 7643, Route Saclay, F-91128 Palaiseau, France

[4] Inst Elect Microelect & Nanotechnol, UMR CNRS 8520, Ave Poincare, F-59652 Villeneuve Dascq, France

[5] AF Ioffe Phys Tech Inst, Politekhnicheskaya Ul 26, St Petersburg 194021, Russia

[6] Thales Res & Technol, 1 Ave Augustin Fresnel, F-91767 Palaiseau, France

[7] III V Lab, 1 Ave Augustin Fresnel, F-91767 Palaiseau, France

来源：

OPTICA | 2017年 / 4卷 / 02期

基金：

欧洲研究理事会;

关键词：

CRYSTAL NANOCAVITY; GENERATION; NANOWIRE;

D O I：

10.1364/OPTICA.4.000218

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Gallium arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro- and nanoscale, they allow strong interaction with quantum dots and quantum wells, and promise stunning optically active devices. However, gallium arsenide optical structures presently exhibit lower performance than their passive counterparts based on silicon, notably in nano-photonics, where the surface plays a chief role. Here, we report on advanced surface control of miniature gallium arsenide optical resonators using two distinct techniques that produce permanent results. One extends the lifetime of free carriers and enhances luminescence, while the other strongly reduces surface absorption and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to 6 x 10(6) at the telecom wavelength, greatly surpassing previous realizations and opening new prospects for gallium arsenide nanophotonics. (C) 2017 Optical Society of America

引用

页码：218 / 221

页数：4

共 41 条

[1] Reduced propagation loss in silicon strip and slot waveguides coated by atomic layer deposition [J].