Theory of the quantum Hall effect at v=1/2 in a wide quantum well -: art. no. 155313

被引：9
作者：
Fujita, S [1 ]
Okamura, Y
机构：
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] Ube Natl Coll Technol, Dept Elect Engn, Yamaguchi 7558555, Japan
来源：
PHYSICAL REVIEW B | 2004年 / 69卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.69.155313
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In a monolayer system a composite (c) fermion with two flux quanta (fluxons) is known to be generated at the Landau level occupation number (filling factor) nu=1/2. In a bilayer system two c fermions are bound via the phonon exchange to form a pair (p) c boson with parallel electron spins and the system of condensed pc bosons generates a quantum Hall effect (QHE) state at nu=1/2. Similar pc bosons are formed more efficiently at nu=1, and the QHE state developed is stronger. These QHE states become weaker at a tilted magnetic field since the pc boson has a p-wave-type charge distribution with the preferred axis along [001].
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页码：155313 / 1
页数：8
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