Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers

被引：7

作者：

Al Choueiry, A. ^{[1
]}

Jurdyc, A. M. ^{[1
]}

Jacquier, B. ^{[1
]}

Gourbilleau, F. ^{[2
]}

Rizk, R. ^{[2
]}

机构：

[1] Univ Lyon 1, CNRS, LPCML, F-69622 Villeurbanne, France

[2] Univ Caen, CIMAP, UMR CNRS CEA ENSICAEN, F-14050 Caen, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 05期

关键词：

amorphous semiconductors; doping; elemental semiconductors; erbium; fluorescence; high-speed optical techniques; infrared spectra; multilayers; nanoparticles; silicon; silicon compounds; visible spectra; SI NANOCRYSTALS; ENERGY-TRANSFER; OPTICAL-PROPERTIES; ER IONS; PHOTOLUMINESCENCE; SIO2-FILMS;

D O I：

10.1063/1.3211319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy transfer process between amorphous silicon nanoparticles and erbium ions in Er-doped silicon-rich silicon oxide is investigated by fluorescence dynamics measurements. A fast decay is observed in the wavelength range of the radiative relaxation of erbium excited ions at 1.53 mu m. Alternatively to a previous interpretation, we assign this fast decay to emission of deep traps induced by Si-based sensitizers of Er(3+) ions, which emit in the visible and the infrared region.

引用

收藏

页数：5

相关论文

共 16 条

[1] Fluorescence dynamics and energy migration in Er3+-doped SRSO structure [J].

Al Choueiry, Antoine ;

Jurdyc, Anne-Marie ;

Jacquier, Bernard ;

Gourbilleau, Fabrice ;

Rizk, Richard .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2008, 146 (1-3) :157-159

[2] Probe of the Si nanoclusters to Er3+ energy transfer dynamics by double-pulse excitation -: art. no. 061109 [J].

Falconieri, M ;

Borsella, E ;

De Dominicis, L ;

Enrichi, F ;

Franzò, G ;

Priolo, F ;

Iacona, F ;

Gourbilleau, F ;

Rizk, R .

APPLIED PHYSICS LETTERS, 2005, 87 (06)

[3] Auger deexcitation of Er3+ ions in crystalline Si optically induced by midinfrared illumination -: art. no. 035213 [J].

Forcales, M ;

Gregorkiewicz, T ;

Bresler, MS .

PHYSICAL REVIEW B, 2003, 68 (03)

[4] 1.54 mu m photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+ [J].

Fujii, M ;

Yoshida, M ;

Kanzawa, Y ;

Hayashi, S ;

Yamamoto, K .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1198-1200

[5] Coexistence of two different energy transfer processes in SiO2 films containing Si nanocrystals and Er [J].

Fujii, M ;

Imakita, K ;

Watanabe, K ;

Hayashi, S .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (01) :272-280

[6] Fabrication and optical properties of Er-doped multilayers Si-rich SiO2/SiO2:: size control, optimum Er-Si coupling and interaction distance monitoring [J].

Gourbilleau, F ;

Madelon, R ;

Dufour, C ;

Rizk, R .

OPTICAL MATERIALS, 2005, 27 (05) :868-875

[7] Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μm emission [J].

Gourbilleau, F ;

Levalois, M ;

Dufour, C ;

Vicens, J ;

Rizk, R .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) :3717-3722

[8] The mechanism of energy transfer from Si nanocrystals to Er ions in SiO2 [J].

Imakita, K ;

Fujii, M ;

Hayashi, S .

EUROPEAN PHYSICAL JOURNAL D, 2005, 34 (1-3) :161-163

[9] Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals [J].

Izeddin, I. ;

Moskalenko, A. S. ;

Yassievich, I. N. ;

Fujii, M. ;

Gregorkiewicz, T. .

PHYSICAL REVIEW LETTERS, 2006, 97 (20)

[10] Non-radiative sub-micro second recombination of excited Er3+ ions in SiO2 sensitized with Si nanocrystals [J].

Izeddin, I. ;

Gregorkiewicz, T. ;

Fujii, M. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 38 (1-2) :144-147